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Renhe Pharmaceutical invested in Jiangxi to establish a health industry company. According to the enterprise search APP, Jiangxi Renhe Jiuniuai Health Industry Co., Ltd. was recently established, with Xin Li as the legal representative and a registered capital of 1 million yuan. Its business scope includes: food Internet sales, health food production, health care services (non-medical), health consulting services, sales of first-class medical devices, sales of agricultural and sideline products, etc. Enterprise survey shows that the company is jointly held by Renhe Pharmaceutical and Xin Li.Turkey imposes additional tax on Iranian flat glass imports.India's SENSEX30 index opened 0.06% lower at 81,476.76 points. Among the constituent stocks, State Power of India opened 0.79% higher, Mahengda Information Technology rose 0.56%, and Tata Motors rose 0.5%; In terms of decline, HDFC BANK opened 0.74% lower, Bharti Telecom fell 0.68%, and Unilever of India fell 0.53%.

Intel: Breakthrough progress has been made in chip interconnection, and the inter-line capacitance has been reduced by 25%. Recently, Intel OEM announced a major breakthrough in on-chip interconnection technology. The latest subtractive Ruthenium interconnection technology of the company can reduce the inter-line capacitance by up to 25%, effectively improving the on-chip interconnection. According to reports, the subtractive ruthenium interconnection technology has achieved great progress in interconnection miniaturization by using ruthenium, a new, key and alternative metallization material, and using thin film resistivity and airgap. This process does not need an expensive photolithographic air gap exclusion zone around the via, and it can also avoid using a self-aligned via that is selectively etched. When the spacing is less than or equal to 25 nm, the air gap realized by reducing ruthenium interconnection technology can reduce the capacitance between lines by up to 25%, which can be used as a metallization scheme to replace copper damascene process in closely spaced layers. It is reported that this solution is expected to be applied in the future process nodes of Intel OEM. (Sina Technology)Indian Rupee's exchange rate against the US dollar fell below 84.86, a record low.Market news: Britain is considering the largest auction of renewable energy subsidies in history.

Indian Trade Secretary: India will need more imports to maintain high growth, and should not be too worried about the trade deficit.The Sharm el-Liberation Organization said that Syria will form a government led by technocrats, and Abu Mohammad Giulani, leader of the Syrian armed group "Liberation Syria" (also translated as "Sharm el-Liberation Organization"), said in a statement on December 11th that the organization will cooperate with international organizations to ensure the safety of the sites where chemical weapons may be stored. He also said that the security forces during the Assad regime will be demobilized. Giulani also said that he will form a technocratic government, and the current transitional government will be in power until March 2025. (CCTV News)Intel: Breakthrough progress has been made in chip interconnection, and the inter-line capacitance has been reduced by 25%. Recently, Intel OEM announced a major breakthrough in on-chip interconnection technology. The latest subtractive Ruthenium interconnection technology of the company can reduce the inter-line capacitance by up to 25%, effectively improving the on-chip interconnection. According to reports, the subtractive ruthenium interconnection technology has achieved great progress in interconnection miniaturization by using ruthenium, a new, key and alternative metallization material, and using thin film resistivity and airgap. This process does not need an expensive photolithographic air gap exclusion zone around the via, and it can also avoid using a self-aligned via that is selectively etched. When the spacing is less than or equal to 25 nm, the air gap realized by reducing ruthenium interconnection technology can reduce the capacitance between lines by up to 25%, which can be used as a metallization scheme to replace copper damascene process in closely spaced layers. It is reported that this solution is expected to be applied in the future process nodes of Intel OEM. (Sina Technology)